Researchers create graphite memory only 10 atoms thick

Researchers at Rice University have demonstrated a new high-capacity data storage medium made out of a layer of graphene (layers of graphite) only 10 carbon atoms thick.

The new graphene technology could some day replace NAND flash memory, which will reach its limit of 20nm by around 2012. Graphehe is also more viable for three-dimensional or stacked arrays, multiplying capacity.